SI6544BDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Max Power Dissipation :

830mW

Transistor Element Material :

SILICON

Resistance :

32mOhm

JESD-609 Code :

e3

Width :

4.4958mm

Continuous Drain Current (ID) :

2.7A

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rise Time :

14ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.0988mm

Power Dissipation :

830mW

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

FET Feature :

Logic Level Gate

Number of Elements :

2

Published :

2008

Pin Count :

8

Packaging :

Tape and Reel (TR)

Base Part Number :

SI6544

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.8A, 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain Current-Max (Abs) (ID) :

3.7A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

40 ns

Terminal Finish :

PURE MATTE TIN

Terminal Form :

Gull wing

Height :

1.0414mm

FET Type :

N and P-Channel

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Series :

TrenchFET®

Fall Time (Typ) :

14 ns

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

3.7A 3.8A

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V