SI4896DY-T1-E3
- Mfr.Part #
- SI4896DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 6.7A 8SO
- Stock
- 14,106
- In Stock :
- 14,106
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 40 ns
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Ta
- Vgs(th) (Max) @ Id :
- 2V @ 250μA (Min)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Length :
- 5mm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 2 V
- Number of Channels :
- 1
- Power Dissipation :
- 1.56W
- Height :
- 1.55mm
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 17 ns
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Resistance :
- 16.5mOhm
- Number of Terminations :
- 8
- Terminal Finish :
- Matte Tin (Sn)
- Threshold Voltage :
- 2V
- Published :
- 2016
- Pin Count :
- 8
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 16.5m Ω @ 10A, 10V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4mm
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 1.56W Ta
- Terminal Position :
- Dual
- Reach Compliance Code :
- Unknown
- Drain to Source Breakdown Voltage :
- 80V
- Drain Current-Max (Abs) (ID) :
- 6.7A
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 11 ns
- Weight :
- 506.605978mg
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchFET®
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 9.5A
- Rise Time :
- 11ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Datasheets
- SI4896DY-T1-E3

N-Channel Tape & Reel (TR) 16.5m Ω @ 10A, 10V ±20V 41nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4896DY-T1-E3 Overview
This device has a continuous drain current (ID) of [9.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=80V, the drain-source breakdown voltage is 80V.A device's drain current is its maximum continuous current, and this device's drain current is 6.7A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (6V 10V).
SI4896DY-T1-E3 Features
a continuous drain current (ID) of 9.5A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 40 ns
a threshold voltage of 2V
SI4896DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4896DY-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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