SI4894BDY-T1-E3

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Mfr.Part #
SI4894BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 8.9A 8SO
Stock
251,203
In Stock :
251,203

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
TrenchFET®
Vgs (Max) :
±20V
Height :
1.55mm
Resistance :
11mOhm
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
30
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Number of Elements :
1
Radiation Hardening :
No
Lead Free :
Lead Free
Width :
4mm
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
8.9A Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Termination :
SMD/SMT
Element Configuration :
Single
Pin Count :
8
Transistor Element Material :
SILICON
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Number of Pins :
8
Length :
5mm
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Dual Supply Voltage :
30V
Turn-Off Delay Time :
33 ns
Power Dissipation :
1.4W
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
1.4W Ta
Vgs(th) (Max) @ Id :
3V @ 250µA
Rise Time :
10ns
Mount :
Surface Mount
Contact Plating :
Tin
Turn On Delay Time :
13 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Weight :
186.993455mg
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
1580pF @ 15V
Number of Terminations :
8
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
10 ns
Rds On (Max) @ Id, Vgs :
11m Ω @ 12A, 10V
Continuous Drain Current (ID) :
12A
Mounting Type :
Surface Mount
Factory Lead Time :
14 Weeks
Nominal Vgs :
3 V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1
Datasheets
SI4894BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4894BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, SI4894BDY-T1-E3 pinout, SI4894BDY-T1-E3 datasheet PDF, SI4894BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4894BDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4894BDY-T1-E3


N-Channel Tape & Reel (TR) 11m Ω @ 12A, 10V ±20V 1580pF @ 15V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SI4894BDY-T1-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1580pF @ 15V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI4894BDY-T1-E3 Features


a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns


SI4894BDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4894BDY-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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