SI4892DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Terminal Position :

Dual

Pbfree Code :

yes

Published :

2012

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

ECCN Code :

EAR99

Power Dissipation-Max :

1.6W Ta

Series :

TrenchFET®

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

12m Ω @ 12.4A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Turn On Delay Time :

10 ns

Rise Time :

11ns

Terminal Finish :

MATTE TIN

Pin Count :

8

Fall Time (Typ) :

10 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 5V

Power Dissipation :

1.6W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

24 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

8.8A

Drain-source On Resistance-Max :

0.012Ohm