SI4892DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.5494mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

1.6W Ta

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.6W

Vgs (Max) :

±20V

Element Configuration :

Single

Radiation Hardening :

No

Fall Time (Typ) :

11 ns

FET Type :

N-Channel

Turn-Off Delay Time :

24 ns

Turn On Delay Time :

10 ns

Drain to Source Resistance :

12mOhm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 5V

Rds On Max :

12 mΩ

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Length :

4.9784mm

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Rise Time :

11ns

Number of Elements :

1

Series :

TrenchFET®

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

8.8A

Supplier Device Package :

8-SO

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

12mOhm @ 12.4A, 10V

Resistance :

12mOhm

Drain to Source Breakdown Voltage :

30V