SI4890DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2015

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

186.993455mg

Number of Terminations :

8

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Number of Pins :

8

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

Rise Time :

8.5ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

17 ns

Turn-Off Delay Time :

35 ns

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

12m Ω @ 11A, 10V

Mount :

Surface Mount

Radiation Hardening :

No

Turn On Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Channels :

1

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

50A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Threshold Voltage :

10V

Transistor Application :

SWITCHING

Pin Count :

8

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

ECCN Code :

EAR99

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30