SI4890BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

186.993455mg

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Pin Count :

8

Turn On Delay Time :

20 ns

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Width :

4mm

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

Number of Terminations :

8

Threshold Voltage :

2.6V

Mounting Type :

Surface Mount

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

Drain to Source Breakdown Voltage :

30V

Contact Plating :

Tin

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Vgs (Max) :

±25V

Terminal Finish :

Silver (Ag)

Power Dissipation-Max :

2.5W Ta 5.7W Tc

Pulsed Drain Current-Max (IDM) :

60A

Continuous Drain Current (ID) :

16A

Series :

TrenchFET®

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

20 ns

Length :

5mm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Number of Channels :

1

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

12m Ω @ 10A, 10V

FET Type :

N-Channel

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.6V @ 250μA

ECCN Code :

EAR99

Height :

1.5mm

Number of Pins :

8

Avalanche Energy Rating (Eas) :

20 mJ