SI4888DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.6W Ta

Mount :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 5V

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Supplier Device Package :

8-SO

Width :

3.9878mm

Rds On Max :

7 mΩ

Height :

1.5494mm

Lead Free :

Lead Free

Published :

2008

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

16A

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

7mOhm @ 16A, 10V

Series :

TrenchFET®

Turn On Delay Time :

14 ns

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

44 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.6W

Number of Pins :

8

Nominal Vgs :

800 mV

Fall Time (Typ) :

10 ns

Length :

4.9784mm

Max Operating Temperature :

150°C

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Rise Time :

10ns

REACH SVHC :

Unknown

Resistance :

7mOhm

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

Drain to Source Resistance :

7mOhm

Radiation Hardening :

No