SI4884BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Element Configuration :

Single

Mount :

Surface Mount

Length :

5mm

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

16.5A

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1525pF @ 15V

Number of Terminations :

8

Fall Time (Typ) :

8 ns

Turn On Delay Time :

8 ns

Terminal Form :

Gull wing

Rise Time :

11ns

JESD-609 Code :

e3

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Number of Elements :

1

Width :

4mm

Vgs (Max) :

±20V

Height :

1.55mm

Published :

2016

ECCN Code :

EAR99

Terminal Position :

Dual

Resistance :

9mOhm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pin Count :

8

Mounting Type :

Surface Mount

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Power Dissipation-Max :

2.5W Ta 4.45W Tc

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

506.605978mg

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

22 ns

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

9m Ω @ 10A, 10V