SI4884BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Fall Time (Typ) :

8 ns

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

22 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 10A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Vgs (Max) :

±20V

Weight :

506.605978mg

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

16.5A

Mounting Type :

Surface Mount

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.5W

Number of Elements :

1

Length :

5mm

Width :

4mm

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Pin Count :

8

Resistance :

9mOhm

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1525pF @ 15V

Number of Pins :

8

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

8 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Rise Time :

11ns

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 4.45W Tc

FET Type :

N-Channel

Terminal Form :

Gull wing

Height :

1.55mm

Radiation Hardening :

No