SI4880DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

13A

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

ECCN Code :

EAR99

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±25V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Resistance :

8.5mOhm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

30 ns

Number of Terminations :

8

Mounting Type :

Surface Mount

Published :

2016

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

46 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Lead Free :

Lead Free

Rise Time :

9ns

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

50A

Pin Count :

8

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 13A, 10V