SI4876DY-T1-E3
- Mfr.Part #
- SI4876DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 14A 8SO
- Stock
- 892
- In Stock :
- 892
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Drain Current-Max (Abs) (ID) :
- 14A
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 4.5V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Series :
- TrenchFET®
- FET Type :
- N-Channel
- Height :
- 1.5494mm
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Elements :
- 1
- Length :
- 4.9784mm
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 12V
- Fall Time (Typ) :
- 30 ns
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 21A, 4.5V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1.6W Ta
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Rise Time :
- 30ns
- Pin Count :
- 8
- Voltage - Rated DC :
- 20V
- Continuous Drain Current (ID) :
- 21A
- Turn On Delay Time :
- 40 ns
- Transistor Application :
- SWITCHING
- Resistance :
- 34mOhm
- Element Configuration :
- Single
- Number of Terminations :
- 8
- Turn-Off Delay Time :
- 175 ns
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Published :
- 2008
- Power Dissipation :
- 3.6W
- Vgs (Max) :
- ±12V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Width :
- 3.9878mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- SI4876DY-T1-E3

N-Channel Tape & Reel (TR) 5m Ω @ 21A, 4.5V ±12V 80nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4876DY-T1-E3 Overview
This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 14A.When the device is turned off, a turn-off delay time of 175 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SI4876DY-T1-E3 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 175 ns
SI4876DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4876DY-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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