SI4874BDY-T1-GE3
- Mfr.Part #
- SI4874BDY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8SO
- Stock
- 25,047
- In Stock :
- 25,047
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 3230pF @ 15V
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Series :
- TrenchFET®
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 4.5V
- Weight :
- 186.993455mg
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 14 Weeks
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 1.6W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lead Free :
- Lead Free
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 16A
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 16A, 10V
- Terminal Position :
- Dual
- Resistance :
- 7mOhm
- Number of Channels :
- 1
- Datasheets
- SI4874BDY-T1-GE3

N-Channel Tape & Reel (TR) 7m Ω @ 16A, 10V ±20V 3230pF @ 15V 25nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4874BDY-T1-GE3 Overview
A device's maximal input capacitance is 3230pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI4874BDY-T1-GE3 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
SI4874BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4874BDY-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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