SI4874BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3230pF @ 15V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Contact Plating :

Tin

Vgs (Max) :

±20V

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Resistance :

7mOhm

REACH SVHC :

Unknown

Number of Pins :

8

Weight :

186.993455mg

Mount :

Surface Mount

Published :

2017

Power Dissipation-Max :

1.6W Ta

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Number of Elements :

1

Height :

1.55mm

Turn-Off Delay Time :

57 ns

Rise Time :

10ns

Width :

4mm

Turn On Delay Time :

16 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

30V

Element Configuration :

Single

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation :

1.6W

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

16A

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

10 ns

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Threshold Voltage :

3V

Lead Free :

Lead Free

Terminal Position :

Dual

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)