SI4866DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Weight :

186.993455mg

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

82 ns

Mounting Type :

Surface Mount

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

14 Weeks

Number of Terminations :

8

Power Dissipation-Max :

1.6W Ta

Continuous Drain Current (ID) :

11A

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

12V

Pin Count :

8

Rise Time :

32ns

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Turn On Delay Time :

28 ns

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Elements :

1

Terminal Finish :

PURE MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 17A, 4.5V

Fall Time (Typ) :

35 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Drain-source On Resistance-Max :

0.0055Ohm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Series :

TrenchFET®

Element Configuration :

Single

Radiation Hardening :

No

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING