SI4866DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.6W Ta

Weight :

186.993455mg

Terminal Position :

Dual

Pin Count :

8

Number of Pins :

8

Rise Time :

32ns

Drain to Source Breakdown Voltage :

12V

Width :

4mm

Radiation Hardening :

No

Nominal Vgs :

600 mV

Turn On Delay Time :

28 ns

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

17A

Transistor Application :

SWITCHING

Number of Channels :

1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Length :

5mm

Number of Terminations :

8

Height :

1.55mm

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

Mounting Type :

Surface Mount

Element Configuration :

Single

Lead Free :

Lead Free

Turn-Off Delay Time :

82 ns

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Resistance :

5.5mOhm

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 17A, 4.5V

REACH SVHC :

Unknown

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Power Dissipation :

1.6W

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

35 ns

Series :

TrenchFET®

Published :

2009