SI4866BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Length :

5mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

16.1A

JESD-609 Code :

e3

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation :

2.5W

ECCN Code :

EAR99

Published :

2013

Avalanche Energy Rating (Eas) :

20 mJ

Width :

4mm

Resistance :

5.3mOhm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

57 ns

Number of Pins :

8

Element Configuration :

Single

Height :

1.75mm

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 12A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

Drain to Source Breakdown Voltage :

12V

Input Capacitance (Ciss) (Max) @ Vds :

5020pF @ 6V

Mount :

Surface Mount

Power Dissipation-Max :

4.45W Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rise Time :

12ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Weight :

186.993455mg

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

21.5A Tc

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Threshold Voltage :

1V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Lead Free :

Lead Free

Max Junction Temperature (Tj) :

150°C

Series :

TrenchFET®

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Turn On Delay Time :

13 ns

Radiation Hardening :

No