SI4864DY-T1-GE3
- Mfr.Part #
- SI4864DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 17A 8SO
- Stock
- 2,218
- In Stock :
- 2,218
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 25A
- Weight :
- 506.605978mg
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 8V
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 25A, 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 4.5V
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Number of Terminations :
- 8
- Published :
- 2013
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 1.6W Ta
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±8V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- TrenchFET®
- Drain to Source Breakdown Voltage :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Channels :
- 1
- Pin Count :
- 8
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- SI4864DY-T1-GE3

N-Channel Tape & Reel (TR) 3.5m Ω @ 25A, 4.5V ±8V 70nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4864DY-T1-GE3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
SI4864DY-T1-GE3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 20V voltage
SI4864DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4864DY-T1-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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