SI4864DY-T1-E3
- Mfr.Part #
- SI4864DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 17A 8SO
- Stock
- 8,031
- In Stock :
- 8,031
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 14 Weeks
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 25A, 4.5V
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 44 ns
- Element Configuration :
- Single
- Resistance :
- 3.5mOhm
- Pbfree Code :
- yes
- Nominal Vgs :
- 600 mV
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 4.5V
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 44ns
- Vgs (Max) :
- ±8V
- Height :
- 1.55mm
- Weight :
- 506.605978mg
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta
- Power Dissipation :
- 1.6W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 1.6W Ta
- Mount :
- Surface Mount
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Length :
- 5mm
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 25A
- Width :
- 4mm
- Turn On Delay Time :
- 40 ns
- Series :
- TrenchFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Turn-Off Delay Time :
- 150 ns
- Datasheets
- SI4864DY-T1-E3

N-Channel Tape & Reel (TR) 3.5m Ω @ 25A, 4.5V ±8V 70nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4864DY-T1-E3 Overview
This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 150 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SI4864DY-T1-E3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 150 ns
SI4864DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4864DY-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI4800,518 | Vishay | 1,498 | MOSFET N-CH 30V 9A 8SO |
| SI4800BDY-T1-E3 | Vishay | 290,477 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800BDY-T1-GE3 | Vishay | 295,703 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800DY-T1 | Vishay | 19,676 | - |
| SI4804BDY-T1-E3 | Vishay | 66,347 | MOSFET 2N-CH 30V 5.7A 8-SOIC |
| SI4804BDY-T1-GE3 | Vishay | 104 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4804CDY-T1-E3 | Vishay | 64,811 | MOSFET 2N-CH 30V 8A 8SO |
| SI4804CDY-T1-GE3 | Vishay | 777 | MOSFET 2N-CH 30V 8A 8SOIC |
| SI4808DY-T1-E3 | Vishay | 39,330 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4808DY-T1-GE3 | Vishay | 37,783 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4812BDY-T1-E3 | Vishay | 21,415 | MOSFET N-CH 30V 7.3A 8SO |
| SI4812BDY-T1-GE3 | Vishay | 115,896 | MOSFET N-CH 30V 7.3A 8SO |
| SI4814BDY-T1-E3 | Vishay | 10,943 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4814BDY-T1-GE3 | Vishay | 4,594 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4816BDY-T1-E3 | Vishay | 39,137 | MOSFET 2N-CH 30V 5.8A 8-SOIC |
















