SI4862DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Transistor Application :

SWITCHING

Weight :

506.605978mg

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Factory Lead Time :

14 Weeks

Rise Time :

38ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Width :

4mm

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

16V

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn-Off Delay Time :

120 ns

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

1.6W Ta

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Length :

5mm

Continuous Drain Current (ID) :

17A

Number of Elements :

1

Number of Channels :

1

ECCN Code :

EAR99

Vgs (Max) :

±8V

Number of Pins :

8

Turn On Delay Time :

42 ns

Fall Time (Typ) :

38 ns

Drain-source On Resistance-Max :

0.0033Ohm

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 25A, 4.5V

Pbfree Code :

yes

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.6W

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Height :

1.55mm