SI4860DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rise Time :

12ns

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Input Capacitance :

4.5nF

Power Dissipation :

1.6W

Element Configuration :

Single

Terminal Position :

Dual

ECCN Code :

EAR99

REACH SVHC :

Unknown

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

18 ns

Pbfree Code :

yes

Pin Count :

8

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

16A

Threshold Voltage :

1V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Published :

2013

Mounting Type :

Surface Mount

Resistance :

8mOhm

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Elements :

1

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

1.6W Ta

Number of Pins :

8

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

8m Ω @ 16A, 10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Nominal Vgs :

1 V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

46 ns