SI4858DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.5W

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.00525Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Series :

TrenchFET®

Published :

2013

Drain Current-Max (Abs) (ID) :

13A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.25m Ω @ 20A, 10V

Fall Time (Typ) :

10 ns

FET Type :

N-Channel

Turn-Off Delay Time :

83 ns

Power Dissipation-Max :

1.6W Ta

Transistor Element Material :

SILICON

Turn On Delay Time :

21 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Pin Count :

8

Continuous Drain Current (ID) :

20A

Terminal Position :

Dual

Terminal Form :

Gull wing

Rise Time :

10ns

ECCN Code :

EAR99

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ