SI4850EY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Width :

4mm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

22m Ω @ 6A, 10V

REACH SVHC :

Unknown

Vgs (Max) :

±20V

Number of Elements :

1

Nominal Vgs :

1 V

Contact Plating :

Tin

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

10 ns

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Terminal Form :

Gull wing

Height :

1.75mm

ECCN Code :

EAR99

Number of Terminations :

8

Turn On Delay Time :

10 ns

Time@Peak Reflow Temperature-Max (s) :

40

Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Continuous Drain Current (ID) :

8.5A

Published :

2016

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Pbfree Code :

yes

Power Dissipation-Max :

1.7W Ta

Rise Time :

10ns

Length :

5mm

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Turn-Off Delay Time :

25 ns

Max Junction Temperature (Tj) :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Threshold Voltage :

3V

Radiation Hardening :

No

Resistance :

22mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Pins :

8

Transistor Element Material :

SILICON

Current :

6A

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

1.7W

Weight :

506.605978mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)