SI4848DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

2.7A

Radiation Hardening :

No

Turn-Off Delay Time :

24 ns

Rise Time :

10ns

Terminal Position :

Dual

Mount :

Surface Mount

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Resistance :

85mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.5A, 10V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Terminal Form :

Gull wing

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

17 ns

Transistor Element Material :

SILICON

Element Configuration :

Single

Turn On Delay Time :

9 ns

Power Dissipation-Max :

1.5W Ta

Threshold Voltage :

2V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Terminal Finish :

Silver (Ag)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

150V

Published :

2015

Weight :

506.605978mg

Number of Pins :

8

Power Dissipation :

1.5W

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Pbfree Code :

yes

ECCN Code :

EAR99

FET Type :

N-Channel