SI4848DY-T1-E3
- Mfr.Part #
- SI4848DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 2.7A 8SO
- Stock
- 11,462
- In Stock :
- 11,462
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 1.5W
- Terminal Form :
- Gull wing
- Pin Count :
- 8
- Turn-Off Delay Time :
- 24 ns
- JESD-609 Code :
- e3
- Max Junction Temperature (Tj) :
- 150°C
- Continuous Drain Current (ID) :
- 3.7A
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 2V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 2.7A
- Rise Time :
- 10ns
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 3.5A, 10V
- Published :
- 2008
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Width :
- 3.9878mm
- Number of Elements :
- 1
- Fall Time (Typ) :
- 10 ns
- Drain to Source Breakdown Voltage :
- 150V
- Number of Terminations :
- 8
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9 ns
- Weight :
- 506.605978mg
- Nominal Vgs :
- 2 V
- Number of Channels :
- 1
- Length :
- 4.9784mm
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Ta
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs(th) (Max) @ Id :
- 2V @ 250μA (Min)
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.75mm
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Power Dissipation-Max :
- 1.5W Ta
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 85mOhm
- Series :
- TrenchFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Datasheets
- SI4848DY-T1-E3

N-Channel Tape & Reel (TR) 85m Ω @ 3.5A, 10V ±20V 21nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4848DY-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [2.7A] according to its drain current.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
SI4848DY-T1-E3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
a threshold voltage of 2V
SI4848DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4848DY-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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