SI4848ADY-T1-GE3
- Mfr.Part #
- SI4848ADY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 5.5A 8SOIC
- Stock
- 1,176
- In Stock :
- 1,176
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 335pF @ 75V
- Published :
- 2018
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Series :
- TrenchFET®
- Continuous Drain Current (ID) :
- 3.9A
- Power Dissipation-Max :
- 5W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Power Dissipation :
- 2.5W
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Height :
- 1.75mm
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn On Delay Time :
- 8 ns
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 3.9A, 10V
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 150V
- Factory Lead Time :
- 14 Weeks
- Datasheets
- SI4848ADY-T1-GE3

N-Channel Tape & Reel (TR) 84m Ω @ 3.9A, 10V ±20V 335pF @ 75V 9.5nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4848ADY-T1-GE3 Description
SI4848ADY-T1-GE3 is a 150V N-channel MOSFET. This transistor SI4848ADY-T1-GE3 can be applied in DC/DC converters, Boost converters, LED backlighting, PD switch, and Load switch applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SI4848ADY-T1-GE3 is in the SO-8 package with 5W Power dissipations.
SI4848ADY-T1-GE3 Features
ThunderFET® power MOSFET
100 % Rg tested
Drain-source voltage VDS: 150V
Gate-source voltage VGS: ±20V
Lead (Pb)-free and halogen-free
SI4848ADY-T1-GE3 Applications
DC/DC converters
Boost converters
LED backlighting
PD switch
Load switch
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI4800,518 | Vishay | 1,498 | MOSFET N-CH 30V 9A 8SO |
| SI4800BDY-T1-E3 | Vishay | 290,477 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800BDY-T1-GE3 | Vishay | 295,703 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800DY-T1 | Vishay | 19,676 | - |
| SI4804BDY-T1-E3 | Vishay | 66,347 | MOSFET 2N-CH 30V 5.7A 8-SOIC |
| SI4804BDY-T1-GE3 | Vishay | 104 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4804CDY-T1-E3 | Vishay | 64,811 | MOSFET 2N-CH 30V 8A 8SO |
| SI4804CDY-T1-GE3 | Vishay | 777 | MOSFET 2N-CH 30V 8A 8SOIC |
| SI4808DY-T1-E3 | Vishay | 39,330 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4808DY-T1-GE3 | Vishay | 37,783 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4812BDY-T1-E3 | Vishay | 21,415 | MOSFET N-CH 30V 7.3A 8SO |
| SI4812BDY-T1-GE3 | Vishay | 115,896 | MOSFET N-CH 30V 7.3A 8SO |
| SI4814BDY-T1-E3 | Vishay | 10,943 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4814BDY-T1-GE3 | Vishay | 4,594 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4816BDY-T1-E3 | Vishay | 39,137 | MOSFET 2N-CH 30V 5.8A 8-SOIC |
















