SI4845DY-T1-E3
- Mfr.Part #
- SI4845DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.7A 8SO
- Stock
- 18,915
- In Stock :
- 18,915
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 10ns
- Vgs (Max) :
- ±12V
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 8
- Height :
- 1.55mm
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 210mOhm
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Operating Temperature :
- 150°C
- Published :
- 2012
- Length :
- 5mm
- Weight :
- 186.993455mg
- Rds On (Max) @ Id, Vgs :
- 210mOhm @ 2A, 4.5V
- FET Feature :
- Schottky Diode (Isolated)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.5nC @ 4.5V
- Drain to Source Breakdown Voltage :
- -30V
- Width :
- 4mm
- Rds On Max :
- 210 mΩ
- Turn On Delay Time :
- 3 ns
- Turn-Off Delay Time :
- 12 ns
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Input Capacitance :
- 312pF
- Input Capacitance (Ciss) (Max) @ Vds :
- 312pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Fall Time (Typ) :
- 10 ns
- Series :
- LITTLE FOOT®
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.75W Ta 2.75W Tc
- Supplier Device Package :
- 8-SO
- FET Type :
- P-Channel
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- -27A
- Gate to Source Voltage (Vgs) :
- 12V
- Datasheets
- SI4845DY-T1-E3

P-Channel Tape & Reel (TR) 210mOhm @ 2A, 4.5V ±12V 312pF @ 10V 4.5nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
SI4845DY-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 312pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 210mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
SI4845DY-T1-E3 Features
a continuous drain current (ID) of -27A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 210mOhm
a 20V drain to source voltage (Vdss)
SI4845DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4845DY-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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