SI4842BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0042Ohm

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

125 ns

Turn-Off Delay Time :

38 ns

Contact Plating :

Tin

Continuous Drain Current (ID) :

28A

Element Configuration :

Single

Series :

TrenchFET®

Length :

5mm

Radiation Hardening :

No

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Height :

1.55mm

Power Dissipation-Max :

3W Ta 6.25W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 15V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

190ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

20A

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 20A, 10V

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Width :

4mm

Vgs (Max) :

±20V

Fall Time (Typ) :

13 ns

Number of Channels :

1

Terminal Form :

Gull wing

Weight :

186.993455mg

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Published :

2009

ECCN Code :

EAR99

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

8

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown