SI4842BDY-T1-E3
- Mfr.Part #
- SI4842BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 28A 8SO
- Stock
- 9,135
- In Stock :
- 9,135
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 4.2mOhm
- Lead Free :
- Lead Free
- REACH SVHC :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Rise Time :
- 190ns
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 20A, 10V
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 38 ns
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Factory Lead Time :
- 14 Weeks
- Height :
- 1.55mm
- Fall Time (Typ) :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3650pF @ 15V
- Nominal Vgs :
- 1.4 V
- Pin Count :
- 8
- Turn On Delay Time :
- 125 ns
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Series :
- TrenchFET®
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 28A
- Weight :
- 186.993455mg
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 5mm
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Width :
- 4mm
- Power Dissipation :
- 6.25W
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 3W Ta 6.25W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SI4842BDY-T1-E3

N-Channel Tape & Reel (TR) 4.2m Ω @ 20A, 10V ±20V 3650pF @ 15V 100nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4842BDY-T1-E3 Overview
A device's maximum input capacitance is 3650pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 28A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 38 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 125 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4842BDY-T1-E3 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
SI4842BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4842BDY-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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