SI4840DY-T1-E3
- Mfr.Part #
- SI4840DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 10A 8SO
- Stock
- 13,306
- In Stock :
- 13,306
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 14A, 10V
- Fall Time (Typ) :
- 20 ns
- Voltage - Rated DC :
- 40V
- Length :
- 5mm
- Height :
- 1.55mm
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- 8-SO
- Turn On Delay Time :
- 15 ns
- Width :
- 4mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Series :
- TrenchFET®
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 9mOhm
- Drain to Source Voltage (Vdss) :
- 40V
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 40V
- Power Dissipation-Max :
- 1.56W Ta
- Published :
- 2008
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 50 ns
- Power Dissipation :
- 1.56W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 186.993455mg
- Rise Time :
- 10ns
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Channels :
- 1
- Rds On Max :
- 9 mΩ
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 14A
- Datasheets
- SI4840DY-T1-E3

N-Channel Tape & Reel (TR) 9mOhm @ 14A, 10V ±20V 28nC @ 5V 40V 8-SOIC (0.154, 3.90mm Width)
SI4840DY-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 9mOhm.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI4840DY-T1-E3 Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 9mOhm
a 40V drain to source voltage (Vdss)
SI4840DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4840DY-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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