SI4840BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Weight :

186.993455mg

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Factory Lead Time :

14 Weeks

Pbfree Code :

yes

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Length :

5mm

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Resistance :

9mOhm

Turn-Off Delay Time :

30 ns

Nominal Vgs :

1 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

12.4A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Elements :

1

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns

Threshold Voltage :

1V

Element Configuration :

Single

Rise Time :

12ns

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta 6W Tc

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns

Width :

4mm

Number of Pins :

8

Pin Count :

8

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Max Junction Temperature (Tj) :

150°C

Series :

TrenchFET®

Height :

1.75mm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Lead Free :

Lead Free

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

9m Ω @ 12.4A, 10V