SI4838DY-T1-E3
- Mfr.Part #
- SI4838DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 17A 8SO
- Stock
- 7,480
- In Stock :
- 7,480
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 140 ns
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Published :
- 2011
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- REACH SVHC :
- Unknown
- Series :
- TrenchFET®
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 4.5V
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Weight :
- 186.993455mg
- Power Dissipation :
- 1.6W
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 40ns
- Length :
- 5mm
- Vgs (Max) :
- ±8V
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 25A, 4.5V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 12V
- Factory Lead Time :
- 14 Weeks
- Fall Time (Typ) :
- 70 ns
- Element Configuration :
- Single
- Width :
- 4mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Resistance :
- 3mOhm
- Turn On Delay Time :
- 40 ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Height :
- 1.55mm
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta
- Power Dissipation-Max :
- 1.6W Ta
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 8V
- Continuous Drain Current (ID) :
- 25A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Nominal Vgs :
- 600 mV
- Pin Count :
- 8
- FET Type :
- N-Channel
- Datasheets
- SI4838DY-T1-E3

N-Channel Tape & Reel (TR) 3m Ω @ 25A, 4.5V ±8V 60nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4838DY-T1-E3 Overview
This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Using VGS=12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SI4838DY-T1-E3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 140 ns
SI4838DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4838DY-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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