SI4838BDY-T1-GE3
- Mfr.Part #
- SI4838BDY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 34A 8SO
- Stock
- 5,699
- In Stock :
- 5,699
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 400mV
- Vgs (Max) :
- ±8V
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 22.5A
- Drain to Source Breakdown Voltage :
- 12V
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 15A, 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5mm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Width :
- 4mm
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 2.5W
- Pin Count :
- 8
- Max Junction Temperature (Tj) :
- 150°C
- Weight :
- 506.605978mg
- Gate to Source Voltage (Vgs) :
- 8V
- Turn-Off Delay Time :
- 56 ns
- Radiation Hardening :
- No
- Resistance :
- 2.7MOhm
- Rise Time :
- 92ns
- FET Type :
- N-Channel
- Nominal Vgs :
- 400 mV
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Number of Pins :
- 8
- Series :
- TrenchFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 4.5V
- Mount :
- Surface Mount
- Published :
- 2013
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 12 ns
- Height :
- 1.75mm
- REACH SVHC :
- Unknown
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 2.5W Ta 5.7W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 5760pF @ 6V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 19 ns
- Datasheets
- SI4838BDY-T1-GE3

N-Channel Tape & Reel (TR) 2.7m Ω @ 15A, 4.5V ±8V 5760pF @ 6V 84nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4838BDY-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5760pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22.5A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 400mV.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
SI4838BDY-T1-GE3 Features
a continuous drain current (ID) of 22.5A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 56 ns
a threshold voltage of 400mV
SI4838BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4838BDY-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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