SI4836DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.003Ohm

Fall Time (Typ) :

41 ns

Power Dissipation :

1.6W

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Series :

TrenchFET®

Power Dissipation-Max :

1.6W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

17A

Number of Terminations :

8

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pin Count :

8

Transistor Application :

SWITCHING

Turn On Delay Time :

35 ns

Mounting Type :

Surface Mount

Rise Time :

41ns

Drain to Source Breakdown Voltage :

12V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Terminal Form :

Gull wing

Mount :

Surface Mount

JESD-609 Code :

e3

Vgs (Max) :

±8V

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Radiation Hardening :

No

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

400mV @ 250μA (Min)

Turn-Off Delay Time :

190 ns