SI4836DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Published :

2017

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

12V

Number of Terminations :

8

Turn On Delay Time :

35 ns

Continuous Drain Current (ID) :

17A

Rise Time :

41ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

1.6W Ta

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 4.5V

Radiation Hardening :

No

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Element Configuration :

Single

Number of Pins :

8

Fall Time (Typ) :

115 ns

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±8V

Contact Plating :

Tin

Power Dissipation :

1.6W

Vgs(th) (Max) @ Id :

400mV @ 250μA (Min)

Transistor Application :

SWITCHING

Input Capacitance :

860pF

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Resistance :

3mOhm

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

190 ns

Terminal Form :

Gull wing

Pbfree Code :

yes