SI4835DDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Weight :

186.993455mg

Number of Pins :

8

Mounting Type :

Surface Mount

Length :

5mm

Vgs (Max) :

±25V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

15 ns

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

-8.7A

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Height :

1.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

100ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mount :

Surface Mount

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Power Dissipation :

2.5W

Resistance :

18mOhm

Power Dissipation-Max :

2.5W Ta 5.6W Tc

ECCN Code :

EAR99

Number of Channels :

1

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-30V

Published :

2013

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Turn On Delay Time :

44 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

28 ns

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Width :

4mm

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Factory Lead Time :

14 Weeks

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

-3V

Rds On (Max) @ Id, Vgs :

18m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V