SI4835BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-30V

RoHS Status :

ROHS3 Compliant

Published :

2009

Length :

5mm

Drain to Source Resistance :

18mOhm

Height :

1.55mm

Rds On (Max) @ Id, Vgs :

18mOhm @ 9.6A, 10V

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.5W Ta

Number of Channels :

1

Mount :

Surface Mount

Continuous Drain Current (ID) :

7.4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

8-SO

Series :

TrenchFET®

Turn-Off Delay Time :

60 ns

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 5V

Element Configuration :

Single

Number of Elements :

1

Weight :

186.993455mg

Min Operating Temperature :

-55°C

Rise Time :

13ns

Lead Free :

Lead Free

Vgs (Max) :

±25V

Max Operating Temperature :

150°C

Width :

4mm

Fall Time (Typ) :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Rds On Max :

18 mΩ

Turn On Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V