SI4833ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Number of Channels :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-30V

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

19 ns

Pulsed Drain Current-Max (IDM) :

20A

Series :

LITTLE FOOT®

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-4.6A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

186.993455mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

ECCN Code :

EAR99

Rise Time :

11ns

Power Dissipation-Max :

1.93W Ta 2.75W Tc

Vgs (Max) :

±20V

Height :

1.55mm

Published :

2014

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

7 ns

Terminal Finish :

PURE MATTE TIN

Terminal Position :

Dual

Terminal Form :

Gull wing

FET Feature :

Schottky Diode (Isolated)

Radiation Hardening :

No

Number of Pins :

8

Number of Elements :

1

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

8

Drain-source On Resistance-Max :

0.072Ohm

Pin Count :

8

Width :

4mm

Fall Time (Typ) :

8 ns

JESD-609 Code :

e3