SI4831DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

5A

FET Feature :

Schottky Diode (Isolated)

DS Breakdown Voltage-Min :

30V

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

45m Ω @ 5A, 10V

Turn On Delay Time :

13 ns

Power Dissipation-Max :

2W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Weight :

186.993455mg

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Width :

4mm

Number of Channels :

1

FET Type :

P-Channel

Power Dissipation :

2W

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.045Ohm

Fall Time (Typ) :

14 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Height :

1.55mm

Number of Pins :

8

Series :

LITTLE FOOT®

Element Configuration :

Single

Continuous Drain Current (ID) :

5A

Peak Reflow Temperature (Cel) :

260

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

37 ns

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Terminal Form :

Gull wing

Length :

5mm

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)