SI4829DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

PURE MATTE TIN

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2A Tc

FET Feature :

Schottky Diode (Isolated)

Number of Terminations :

8

DS Breakdown Voltage-Min :

20V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation-Max :

2W Ta 3.1W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2A

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Number of Pins :

8

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.215ohm

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

2A

RoHS Status :

ROHS3 Compliant

Series :

LITTLE FOOT®

Rds On (Max) @ Id, Vgs :

215m Ω @ 2.5A, 4.5V

Peak Reflow Temperature (Cel) :

260

Published :

2009