SI4829DY-T1-E3
- Mfr.Part #
- SI4829DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A 8SO
- Stock
- 30,438
- In Stock :
- 30,438
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- FET Feature :
- Schottky Diode (Isolated)
- Number of Elements :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 10V
- JESD-30 Code :
- R-PDSO-G8
- Rds On (Max) @ Id, Vgs :
- 215m Ω @ 2.5A, 4.5V
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- LITTLE FOOT®
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 45ns
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Reach Compliance Code :
- Unknown
- Fall Time (Typ) :
- 10 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs (Max) :
- ±12V
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 20V
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 15 ns
- Continuous Drain Current (ID) :
- 2A
- Drain-source On Resistance-Max :
- 0.215ohm
- Drain Current-Max (Abs) (ID) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation-Max :
- 2W Ta 3.1W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Datasheets
- SI4829DY-T1-E3

P-Channel Tape & Reel (TR) 215m Ω @ 2.5A, 4.5V ±12V 210pF @ 10V 8nC @ 10V 20V 8-SOIC (0.154, 3.90mm Width)
SI4829DY-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 210pF @ 10V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SI4829DY-T1-E3 Features
a continuous drain current (ID) of 2A
the turn-off delay time is 15 ns
a 20V drain to source voltage (Vdss)
SI4829DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4829DY-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI4800,518 | Vishay | 1,498 | MOSFET N-CH 30V 9A 8SO |
| SI4800BDY-T1-E3 | Vishay | 290,477 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800BDY-T1-GE3 | Vishay | 295,703 | MOSFET N-CH 30V 6.5A 8SO |
| SI4800DY-T1 | Vishay | 19,676 | - |
| SI4804BDY-T1-E3 | Vishay | 66,347 | MOSFET 2N-CH 30V 5.7A 8-SOIC |
| SI4804BDY-T1-GE3 | Vishay | 104 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4804CDY-T1-E3 | Vishay | 64,811 | MOSFET 2N-CH 30V 8A 8SO |
| SI4804CDY-T1-GE3 | Vishay | 777 | MOSFET 2N-CH 30V 8A 8SOIC |
| SI4808DY-T1-E3 | Vishay | 39,330 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4808DY-T1-GE3 | Vishay | 37,783 | MOSFET 2N-CH 30V 5.7A 8SOIC |
| SI4812BDY-T1-E3 | Vishay | 21,415 | MOSFET N-CH 30V 7.3A 8SO |
| SI4812BDY-T1-GE3 | Vishay | 115,896 | MOSFET N-CH 30V 7.3A 8SO |
| SI4814BDY-T1-E3 | Vishay | 10,943 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4814BDY-T1-GE3 | Vishay | 4,594 | MOSFET 2N-CH 30V 10A 8SOIC |
| SI4816BDY-T1-E3 | Vishay | 39,137 | MOSFET 2N-CH 30V 5.8A 8-SOIC |
















