SI4829DY-T1-E3

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Mfr.Part #
SI4829DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 2A 8SO
Stock
30,438
In Stock :
30,438

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
FET Feature :
Schottky Diode (Isolated)
Number of Elements :
1
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Number of Terminations :
8
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
Dual
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
210pF @ 10V
JESD-30 Code :
R-PDSO-G8
Rds On (Max) @ Id, Vgs :
215m Ω @ 2.5A, 4.5V
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Series :
LITTLE FOOT®
Peak Reflow Temperature (Cel) :
260
Rise Time :
45ns
Transistor Element Material :
SILICON
Terminal Finish :
MATTE TIN
Reach Compliance Code :
Unknown
Fall Time (Typ) :
10 ns
Drain to Source Voltage (Vdss) :
20V
Vgs (Max) :
±12V
Pbfree Code :
yes
DS Breakdown Voltage-Min :
20V
Published :
2009
Transistor Application :
SWITCHING
Turn-Off Delay Time :
15 ns
Continuous Drain Current (ID) :
2A
Drain-source On Resistance-Max :
0.215ohm
Drain Current-Max (Abs) (ID) :
2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
8
Gate to Source Voltage (Vgs) :
12V
Power Dissipation-Max :
2W Ta 3.1W Tc
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
ECCN Code :
EAR99
Terminal Form :
Gull wing
JESD-609 Code :
e3
Datasheets
SI4829DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4829DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, SI4829DY-T1-E3 pinout, SI4829DY-T1-E3 datasheet PDF, SI4829DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4829DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4829DY-T1-E3


P-Channel Tape & Reel (TR) 215m Ω @ 2.5A, 4.5V ±12V 210pF @ 10V 8nC @ 10V 20V 8-SOIC (0.154, 3.90mm Width)

SI4829DY-T1-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 210pF @ 10V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

SI4829DY-T1-E3 Features


a continuous drain current (ID) of 2A
the turn-off delay time is 15 ns
a 20V drain to source voltage (Vdss)


SI4829DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4829DY-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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