SI4825DY-T1-GE3
- Mfr.Part #
- SI4825DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 8.1A 8SO
- Stock
- 8,628
- In Stock :
- 8,628
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 13 ns
- Vgs (Max) :
- ±25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 15 ns
- Drain to Source Breakdown Voltage :
- -30V
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Turn-Off Delay Time :
- 97 ns
- Power Dissipation-Max :
- 1.5W Ta
- Rise Time :
- 13ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Resistance :
- 14mOhm
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 11.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- 8-SO
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- -11.5A
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 14 mΩ
- Series :
- TrenchFET®
- Published :
- 2016
- Current - Continuous Drain (Id) @ 25°C :
- 8.1A Ta
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Datasheets
- SI4825DY-T1-GE3

P-Channel Tape & Reel (TR) 14mOhm @ 11.5A, 10V ±25V 71nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4825DY-T1-GE3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -11.5A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 97 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 14mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI4825DY-T1-GE3 Features
a continuous drain current (ID) of -11.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 97 ns
single MOSFETs transistor is 14mOhm
a 30V drain to source voltage (Vdss)
SI4825DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4825DY-T1-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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