SI4825DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Mounting Type :

Surface Mount

Drain to Source Resistance :

14mOhm

Current - Continuous Drain (Id) @ 25°C :

8.1A Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

15 ns

Number of Pins :

8

Turn-Off Delay Time :

97 ns

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Elements :

1

Power Dissipation :

1.5W

Weight :

506.605978mg

Drain to Source Breakdown Voltage :

-30V

Series :

TrenchFET®

Fall Time (Typ) :

13 ns

Mount :

Surface Mount

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-9.2A

REACH SVHC :

Unknown

Width :

4mm

Nominal Vgs :

-3 V

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±25V

Resistance :

14mOhm

Power Dissipation-Max :

1.5W Ta

Height :

1.55mm

Published :

2016

Rds On (Max) @ Id, Vgs :

14mOhm @ 11.5A, 10V

Number of Channels :

1

Supplier Device Package :

8-SO

Rise Time :

13ns

Length :

5mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On Max :

14 mΩ

FET Type :

P-Channel

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)