SI4823DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.7W

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Vgs (Max) :

±12V

Power Dissipation-Max :

1.7W Ta 2.8W Tc

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Schottky Diode (Isolated)

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

108m Ω @ 3.3A, 4.5V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

12V

Series :

LITTLE FOOT®

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Channels :

1

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

18 ns

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

3.3A

Weight :

186.993455mg

Element Configuration :

Single

Number of Terminations :

8

Rise Time :

40ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Mount :

Surface Mount

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

Pin Count :

8

Drain to Source Breakdown Voltage :

-20V

Vgs(th) (Max) @ Id :

1.5V @ 250µA