SI4823DY-T1-E3
- Mfr.Part #
- SI4823DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.1A 8SO
- Stock
- 8,988
- In Stock :
- 8,988
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- Schottky Diode (Isolated)
- Number of Terminations :
- 8
- Width :
- 4mm
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 108m Ω @ 3.3A, 4.5V
- Weight :
- 186.993455mg
- Terminal Finish :
- PURE MATTE TIN
- Height :
- 1.5mm
- Turn On Delay Time :
- 18 ns
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 40 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 3.3A
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Rise Time :
- 40ns
- JESD-609 Code :
- e3
- Pin Count :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Breakdown Voltage :
- -20V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation-Max :
- 1.7W Ta 2.8W Tc
- Turn-Off Delay Time :
- 18 ns
- Series :
- LITTLE FOOT®
- Published :
- 2016
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 10V
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Number of Pins :
- 8
- Vgs (Max) :
- ±12V
- Datasheets
- SI4823DY-T1-E3

P-Channel Tape & Reel (TR) 108m Ω @ 3.3A, 4.5V ±12V 660pF @ 10V 12nC @ 10V 20V 8-SOIC (0.154, 3.90mm Width)
SI4823DY-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 660pF @ 10V.This device has a continuous drain current (ID) of [3.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
SI4823DY-T1-E3 Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a 20V drain to source voltage (Vdss)
SI4823DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4823DY-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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