SI4670DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Packaging :

Tape and Reel (TR)

Height :

1.55mm

Continuous Drain Current (ID) :

8A

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

SI4670

Power - Max :

2.8W

Factory Lead Time :

14 Weeks

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 13V

JESD-609 Code :

e3

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Number of Channels :

2

Drain Current-Max (Abs) (ID) :

7A

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Fall Time (Typ) :

50 ns

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

16V

Terminal Finish :

PURE MATTE TIN

Weight :

186.993455mg

Radiation Hardening :

No

Transistor Application :

SWITCHING

Published :

2009

Drain to Source Breakdown Voltage :

25V

Turn On Delay Time :

15 ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rise Time :

50ns

Max Power Dissipation :

1.8W

Drain to Source Voltage (Vdss) :

25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Number of Terminations :

8

Length :

5mm

Number of Pins :

8