SI4618DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.017Ohm

Fall Time (Typ) :

45 ns

Number of Elements :

2

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Channels :

2

Number of Pins :

8

Rise Time :

97ns

Turn On Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

7.4A

FET Feature :

Standard

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Mount :

Surface Mount

Width :

4mm

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

16V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2.35W

Pin Count :

8

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Height :

1.55mm

Transistor Application :

SWITCHING

Power - Max :

1.98W 4.16W

Drain Current-Max (Abs) (ID) :

6.7A

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

17m Ω @ 8A, 10V

Pulsed Drain Current-Max (IDM) :

35A

Weight :

186.993455mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

8A 15.2A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Half Bridge)

Factory Lead Time :

15 Weeks

Base Part Number :

SI4618

Mounting Type :

Surface Mount