SI4626ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

18 ns

Number of Elements :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation :

3W

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

30A

Pin Count :

8

Turn-Off Delay Time :

45 ns

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

JESD-609 Code :

e3

Element Configuration :

Single

Rise Time :

21ns

Input Capacitance (Ciss) (Max) @ Vds :

5370pF @ 15V

Weight :

186.993455mg

Turn On Delay Time :

44 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Number of Terminations :

8

Power Dissipation-Max :

3W Ta 6W Tc

Width :

4mm

Length :

5mm

Radiation Hardening :

No

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Contact Plating :

Tin

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Published :

2016

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0033Ohm

Series :

TrenchFET®