SI4650DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 15V

Max Power Dissipation :

3.1W

Turn-Off Delay Time :

19 ns

Number of Elements :

2

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

30A

Number of Channels :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Half Bridge)

Transistor Element Material :

SILICON

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Number of Terminations :

8

Terminal Position :

Dual

Published :

2016

Fall Time (Typ) :

34 ns

Base Part Number :

SI4650

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Pins :

8

Pin Count :

8

Radiation Hardening :

No

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Rise Time :

130ns

Weight :

186.993455mg

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

18m Ω @ 8A, 10V

Height :

1.5mm

Turn On Delay Time :

32 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8A

Continuous Drain Current (ID) :

7.8A

Peak Reflow Temperature (Cel) :

260

Width :

4mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)