SI4493DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Terminal Form :

Gull wing

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

1.5W

Number of Terminations :

8

Pin Count :

8

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

7.75m Ω @ 14A, 4.5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

220 ns

Turn On Delay Time :

110 ns

Drain-source On Resistance-Max :

0.00775Ohm

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

10A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Number of Elements :

1

Fall Time (Typ) :

150 ns

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Radiation Hardening :

No

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rise Time :

150ns

Power Dissipation-Max :

1.5W Ta

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Published :

2013

FET Type :

P-Channel

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V